? 2012 ixys corporation, all rights reserved ds99065c(11/12) power mosfet IXKK85N60C features z 3 rd generation coolmos power mosfet - high blocking capability - low on resistance - avalanche rated z low thermal resistance due to reduced chip thickness applications z switch-mode power-supplies z uninterruptible power supplies z power factor correction z welding z inductive heating symbol test conditions maximum ratings v dss t j = 25 c 600 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 85 a i d100 t c = 100 c 55 a i as t c = 25 c, i d = 10a 1.8 j e as t c = 25 c, i d = 20a 1 mj dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns t j -55 ... +150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v gs(th) v ds = v gs , i d = 5.4ma 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 500 a r ds(on) v gs = 10v, i d = 55a, note 1 30 36 m g d s v dss = 600v i d25 = 85a r ds(on) 36m low r ds(on) , high voltage coolmos tm superjunction mosfet g = gate d = drain s = source tab = drain to-264 s g d tab
ixys reserves the right to change limits, test conditions, and dimensions. IXKK85N60C ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain 3 - source 4 - drain millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 (ixkk) outline symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. c iss 13.6 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 4400 pf c rss 290 pf t d(on) 20 ns t r 27 ns t d(off) 110 ns t f 10 ns q g(on) 500 640 nc q gs v gs = 10v, v ds = 350v, i d = 85a 50 nc q gd 240 nc r thjc 0.18 c/w r thch 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 85 a i sm repetitive, pulse width limited by t jm 250 a v sd i f = i s , v gs = 0v, note 1 1.2 v t rr 580 ns q rm 46 c i rm 140 a note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 13v, v ds = 380v, i d = 85a r g = 1 (external) i f = 85a, -di/dt = 200a/ s v r = 350v, v gs = 0v
? 2012 ixys corporation, all rights reserved IXKK85N60C fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 280 320 360 0 2 4 6 8 10 12 14 16 18 v d s - volts i d - amperes v gs = 10v 7v 5v 6v t p = 300s fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 100 01 2345 67 v d s - volts i d - amperes v gs = 10v 5v 4v 4.5v t p = 300s fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 v d s - volts i d - amperes v gs = 10v 6v 5v 4v 4.5v t p = 300s fig. 4. r ds(on) no r m aliz e d t o i d100 v alue vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 60a i d = 30a v gs = 10v t p = 300s fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to i d100 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 0 40 80 120 160 200 240 280 320 360 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v t p = 300s
ixys reserves the right to change limits, test conditions, and dimensions. IXKK85N60C fig. 11. capacitance 10 100 1000 10000 100000 0 10 203040 50607080 90100 v ds - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 60 120 180 240 300 360 420 480 540 q g - nanocoulombs v g s - volts v ds = 350v i d = 80a i g = 10ma fig. 7. input admittance 0 30 60 90 120 150 180 210 240 22.5 33.5 44.5 55.5 6 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 12. maxim um transient therm al resistance 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 30 60 90 120 150 180 210 240 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 20 40 60 80 100 120 140 160 180 200 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125oc t j = 25oc
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